NJV4030PT3G, Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN
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- Код товара
- 8005526462
- Артикул
- NJV4030PT3G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Вес, г
- 0.11
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 63,33 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы 40V 2W 200@1A, 1V 3A PNP SOT-223-4 - BJT ROHS
Технические параметры
| Brand: | onsemi |
| Вес, г | 0.11 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-223 |
| Manufacturer: | onsemi |
| Package/Case: | SOT-223-4 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 3A |
| Factory Pack Quantity: | 4000 |
| Power Dissipation (Pd) | 2W |
| Pd - Power Dissipation: | 2 W |
| DC Current Gain hFE Max: | 400 at 1 A, 1 VDC |
| Transition Frequency (fT) | 160MHz |
| Gain Bandwidth Product fT: | 160 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain (hFE@Ic,Vce) | 200@1A, 1V |
| Collector- Base Voltage VCBO: | 40 V |
| Continuous Collector Current: | 3 A |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 200 at 1 A, 1 VDC |
| Collector Cut-Off Current (Icbo) | 100nA |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@3A, 300mA |