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NJL0281DG, Trans GP BJT NPN 260V 15A 180000mW 5-Pin(5+Tab) TO-264 Tube

NJL0281DG, Trans GP BJT NPN 260V 15A 180000mW 5-Pin(5+Tab) TO-264 Tube

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Код товара
8001013442
Артикул
NJL0281DG
Бренд
ON Semiconductor***
HTS
8541.29.00.95
Tab
Tab
PPAP
No
SVHC
Yes
Цена по запросу
(от 1 010 ₽)
Минимальный заказ: 83 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярные транзисторы - BJT NPN 150W THERMALTRAK PPD

Технические параметры

HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
TypeNPN
Brand:onsemi
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count5
AutomotiveNo
Packaging:Tube
Вес, г1
PCB changed5
Part StatusActive
Technology:Si
Subcategory:Transistors
КорпусTO-264
ConfigurationSingle
Manufacturer:onsemi
Package Width4.89
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package Height25.98
Package Length19.89
Mounting Style:Through Hole
Product CategoryBipolar Power
Supplier PackageTO-264
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Factory Pack Quantity:25
SVHC Exceeds ThresholdYes
Minimum DC Current Gain75@500mA@5V|75@1A@5V|75@3A@5V
Pd - Power Dissipation:180 W
Gain Bandwidth Product fT:30 MHz
Emitter- Base Voltage VEBO:5 V
Number of Elements per Chip1
Collector- Base Voltage VCBO:260 V
Maximum DC Collector Current:15 A
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)180000
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:75
Maximum DC Collector Current (A)15
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)260
Maximum Transition Frequency (MHz)30(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Collector- Emitter Voltage VCEO Max:260 V
Collector-Emitter Saturation Voltage:1 V
Maximum Collector-Emitter Voltage (V)260
Maximum Collector-Emitter Saturation Voltage (V)1@0.5A@5A

Техническая документация