NJD2873T4G, Trans GP BJT NPN 50V 2A 1680mW 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001106369
- Артикул
- NJD2873T4G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Tab
- Tab
- Type
- NPN
- Brand
- ON Semiconductor
Цена по запросу
(от 49 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, NPN, 50 В, 2 А
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| Type | NPN |
| Brand | ON Semiconductor |
| Series | NJD2873 |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Package Type | DPAK(TO-252) |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | DPAK-3 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 6.22(Max) |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Package Height | 2.38(Max) |
| Package Length | 6.73(Max) |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | DPAK |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 2500 |
| Standard Package Name | TO-252 |
| Pd - Power Dissipation | 15 W |
| Minimum DC Current Gain | 120@0.5A@2V|40@2A@2V |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 65 MHz |
| Maximum Power Dissipation | 15 W |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum Operating Frequency | 10 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 50 V |
| Continuous Collector Current | 2 A |
| Maximum DC Collector Current | 2 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain Hfe Min | 120 |
| Maximum Collector Base Voltage | 50 V dc |
| Maximum Power Dissipation (mW) | 1680 |
| Maximum DC Collector Current (A) | 2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 50 V |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 65(Min) |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -65 |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@0.05A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.05A@1A |
| Максимально допустимый ток к ( Iк макс.А) | 2 |