NGTB03N60R2DT4G, Trans IGBT Chip N-CH 600V 9A 49W 3-Pin(2+Tab) DPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001146568
- Артикул
- NGTB03N60R2DT4G
- Бренд
- ON Semiconductor***
- HTS
- NGTB03N60R2DT4G
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 110 ₽)
Минимальный заказ: 842 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | NGTB03N60R2DT4G |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 7.2 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Type | N |
| Configuration | Single |
| Package Width | 6.22(Max) |
| Package Height | 2.38(Max) |
| Package Length | 6.73(Max) |
| Supplier Package | DPAK |
| Standard Package Name | TO-252 |
| SVHC Exceeds Threshold | Yes |
| Maximum Power Dissipation (mW) | 49 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 600 |
| Maximum Continuous Collector Current (A) | 9 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Typical Collector Emitter Saturation Voltage (V) | 1.7 |