NDTL03N150CG, Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-3P Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002184724
- Артикул
- NDTL03N150CG
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
- Series
- -
Цена по запросу
(от 530 ₽)
Минимальный заказ: 166 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 1,5 кВ 2,5 А с 3-контактным разъемом (3+ язычка) на 3P-трубке
Технические параметры
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| Series | - |
| FET Type | N-Channel |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Vgs (Max) | В±30V |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| FET Feature | - |
| PCB changed | 3 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | ON Semiconductor |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package Width | 4.8 mm |
| Package / Case | TO-3PL |
| Package Length | 15.6 mm |
| Product Category | Power MOSFET |
| Supplier Package | TO-3P |
| Maximum IDSS (uA) | 1000 |
| Vgs(th) (Max) @ Id | - |
| Структура | N-Channel |
| Operating Temperature | 150В°C(TJ) |
| Standard Package Name | TO |
| Rds On (Max) @ Id, Vgs | 10.5Ohm @ 1.25A, 10V |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 47 |
| Typical Rise Time (ns) | 24 |
| Особенности | высоковольтный |
| Power Dissipation (Max) | 2.5W(Ta), 140W(Tc) |
| Supplier Device Package | TO-3P(L) |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Drain to Source Voltage (Vdss) | 1500V |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 34 |
| Typical Gate Charge @ Vgs (nC) | 34@10V |
| Maximum Gate-Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 15 |
| Maximum Drain-Source Voltage (V) | 1500 |
| Typical Turn-Off Delay Time (ns) | 140 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 30V |
| Maximum Continuous Drain Current (A) | 2.5 |
| Typical Input Capacitance @ Vds (pF) | 650@30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Maximum Drain-Source Resistance (mOhm) | 10500@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Current - Continuous Drain (Id) @ 25В°C | 2.5A(Ta) |
| Пороговое напряжение на затворе | 4V@250uA |
| Максимальное напряжение сток-исток Uси,В | 1500 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |