NDT3055L, MOSFETs SOT-223 N-CH LOGIC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004835891
- Артикул
- NDT3055L
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Series:
- NDT3055L
- Pin Count
- 3
- Fall Time:
- 7 ns
Цена по запросу
(от 132,59 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 60В, 4А, 3Вт, SOT223
Технические параметры
| Brand: | onsemi/Fairchild |
| Series: | NDT3055L |
| Pin Count | 3 |
| Fall Time: | 7 ns |
| Rise Time: | 7.5 ns |
| Вес, г | 0.17 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Part # Aliases: | NDT3055L_NL |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 20 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 3 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3 W |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 5 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 20 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -65 °C |
| Id - Continuous Drain Current: | 4 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature: | -65 C |
| Forward Transconductance - Min: | 7 S |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance: | 70 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Крутизна характеристики, S | 7 |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |