P-Channel MOSFET, 2.5 A, 60 V, 3-Pin SOT-223 NDT2955
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8031065942
- Артикул
- NDT2955
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Width
- 3.56mm
- Brand:
- onsemi/Fairchild
Цена по запросу
(от 79 ₽)
Минимальный заказ: 4000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Линейка P-канальныx МОП-транзисторов ON Semiconductors производится с использованием запатентованной компанией ON Semi теxнологии DMOS с высокой плотностью ячеек.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Width | 3.56mm |
| Brand: | onsemi/Fairchild |
| EU RoHS | Compliant with Exemption |
| Series: | NDT2955 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 6 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 10 ns |
| Вес, г | 5 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-223 |
| Subcategory: | MOSFETs |
| Корпус | SOT-223 |
| Channel Mode: | Enhancement |
| Configuration | Single Dual Drain |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Part # Aliases: | NDT2955_NL |
| Product Category | Power MOSFET |
| Supplier Package | SOT-223 |
| Transistor Type: | 1 P-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Process Technology | TMOS |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | P-Channel |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 6 |
| Typical Rise Time (ns) | 10 |
| Особенности | - |
| Pd - Power Dissipation: | 3 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 3 W |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 12 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 19 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 2.5 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 3000 |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 11 |
| Typical Gate Charge @ Vgs (nC) | 11@10V |
| Forward Transconductance - Min: | 5.5 S |
| Maximum Drain Source Resistance | 300 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Rds On - Drain-Source Resistance: | 95 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.5 |
| Typical Input Capacitance @ Vds (pF) | 601@30V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Maximum Drain Source Resistance (mOhm) | 300@10V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Крутизна характеристики, S | 5.5 S |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |