NCV8402AMNWT1G, TDFN-6-EP(3x3) MOSFETs ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062887818
- Артикул
- NCV8402AMNWT1G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Fall Time:
- 50 us
- Rise Time:
- 120 us
- Вес, г
- 0.12
Цена по запросу
(от 139,89 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Fall Time: | 50 us |
| Rise Time: | 120 us |
| Вес, г | 0.12 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | onsemi |
| Package/Case: | DFN-6 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 8.9 W |
| Vgs - Gate-Source Voltage: | -14 V, +14 V |
| Typical Turn-On Delay Time: | 25 us |
| Typical Turn-Off Delay Time: | 20 us |
| Id - Continuous Drain Current: | 2 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Rds On - Drain-Source Resistance: | 165 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 42 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |