MUN5212DW1T1G, 2 NPN - Pre-Biased 256mW 100mA 50V SOT-363 Digital Transistors ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062236977
- Артикул
- MUN5212DW1T1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 10 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans Digital BJT NPN 50 В 100 мА 385 МВт 6-контактный SC-88 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Вес, г | 0.03 |
| PCB changed | 6 |
| Part Status | Active |
| Package Type | SOT-363 |
| Configuration | Dual |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Supplier Package | SC-88 |
| Структура | npn |
| Base-Emitter Resistor | 22kΩ |
| Standard Package Name | SC |
| Typical Input Resistor | 22 kΩ |
| Typical Resistor Ratio | 1 |
| Minimum DC Current Gain | 60 5mA 10V |
| Transistor Configuration | Dual |
| Maximum Power Dissipation | 385 mW |
| Number of Elements per Chip | 2 |
| Maximum DC Collector Current | 100 mA |
| Maximum Operating Temperature | +150 °C |
| Typical Input Resistor (kOhm) | 22 |
| Maximum Power Dissipation (mW) | 385 |
| Maximum Collector Emitter Voltage | 50 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (mA) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 0.3mA 10mA |