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MUN5115DW1T1G, Trans Digital BJT PNP 50V 0.1A 385mW 6-Pin SC-88 T/R

MUN5115DW1T1G, Trans Digital BJT PNP 50V 0.1A 385mW 6-Pin SC-88 T/R

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Код товара
8001280337
Артикул
MUN5115DW1T1G
Бренд
ON Semiconductor***
PPAP
No
Type
PNP
Brand:
onsemi
EU RoHS
Compliant
Цена по запросу
(от 58 ₽)
Минимальный заказ: 530 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans Digital BJT PNP 50 В 100 мА 385 МВт 6-контактный SC-88 T/R

Технические параметры

PPAPNo
TypePNP
Brand:onsemi
EU RoHSCompliant
Series:MUN5115DW1
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Вес, г1
PCB changed6
Part StatusActive
Subcategory:Transistors
ConfigurationDual
Manufacturer:onsemi
Product Type:BJTs-Bipolar Transistors-Pre-Biased
Configuration:Dual
Mounting Style:SMD/SMT
Package / Case:SC-88-6
Supplier PackageSC-88
Product Category:Bipolar Transistors-Pre-Biased
Структураpnp
Transistor Polarity:PNP
Standard Package NameSOT
Minimum DC Current Gain160@5mA@10V
Pd - Power Dissipation:250 mW
Typical Input Resistor:10 kOhms
DC Current Gain hFE Max:160 at 5 mA at 10 V
Peak DC Collector Current:100 mA
Continuous Collector Current:-100 mA
Minimum DC Current Gain Range>=120
Typical Input Resistor (kOhm)10
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)385
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:160
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:50 V
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)50
Maximum Continuous DC Collector Current (mA)100
Factory Pack Quantity: Factory Pack Quantity:3000
Maximum Collector-Emitter Saturation Voltage (V)0.25@1mA@10mA
Максимально допустимый ток к ( Iк макс.А)0.1

Техническая документация