MSC130SM120JCU2, Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062536760
- Артикул
- MSC130SM120JCU2
- Бренд
- Microchip Technology
- Type:
- MOSFET/SiC SBD
- Brand:
- Microchip Technology
- Product:
- MOSFET-SiC SBD Modules
- Fall Time:
- 25 ns
Цена по запросу
(от 18 500 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Type: | MOSFET/SiC SBD |
| Brand: | Microchip Technology |
| Product: | MOSFET-SiC SBD Modules |
| Fall Time: | 25 ns |
| Packaging: | Bulk |
| Rise Time: | 30 ns |
| Вес, г | 30 |
| Technology: | SiC |
| Subcategory: | Discrete Semiconductor Modules |
| Manufacturer: | Microchip |
| Product Type: | Discrete Semiconductor Modules |
| Configuration: | Single |
| Mounting Style: | Screw Mount |
| Package / Case: | SOT-227 |
| Product Category: | Discrete Semiconductor Modules |
| Transistor Polarity: | N-Channel |
| Vf - Forward Voltage: | 1.5 V |
| Vr - Reverse Voltage: | 1.2 kV |
| Factory Pack Quantity: | 1 |
| Pd - Power Dissipation: | 745 W |
| Vgs - Gate-Source Voltage: | -10 V, +25 V |
| Typical Turn-On Delay Time: | 30 ns |
| Typical Turn-Off Delay Time: | 50 ns |
| Id - Continuous Drain Current: | 173 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V |