MSC035SMA070B4, Транзистор, 700 В, 77 А, 44 мОм, 30 А, 20 В, 283 Вт, 2,7 В, 2 мА, 1 шт., канал TO-247-4,
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026221589
- Артикул
- MSC035SMA070B4
- Бренд
- Microchip Technology
- Case
- TO247-4
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Brand:
- Microchip Technology/Atmel
Цена по запросу
(от 4 830 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 700В 77А (Tc) 283 Вт (Tc) со сквозным отверстием TO-247-4
Технические параметры
| Case | TO247-4 |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Brand: | Microchip Technology/Atmel |
| Package | Tube |
| FET Type | N-Channel |
| Mounting | THT |
| Vgs (Max) | +23V, -10V |
| Fall Time: | 52 ns |
| Packaging: | Tube |
| Rise Time: | 9 ns |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Вес, г | 6.2 |
| Gate charge | 99nC |
| Technology: | SiC |
| Manufacturer | MICROCHIP(MICROSEMI) |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 54A |
| Manufacturer: | Microchip |
| Mounting Type | Through Hole |
| Package/Case: | TO-247-4 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-247-4 |
| Kind of channel | enhanced |
| Mounting Style: | Through Hole |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 283W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 99 nC |
| Type of transistor | N-MOSFET |
| Vgs(th) (Max) @ Id | 2.7V @ 2mA |
| Base Product Number | MSC035 -> |
| Number of Channels: | 1 Channel |
| On-state resistance | 44mΩ |
| Drain-source voltage | 700V |
| Pulsed drain current | 192A |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 30A, 20V |
| Особенности | - |
| Pd - Power Dissipation: | 283 W |
| Power Dissipation (Max) | 283W (Tc) |
| Supplier Device Package | TO-247-4 |
| Vgs - Gate-Source Voltage: | -10 V, +23 V |
| Typical Turn-On Delay Time: | 10 ns |
| Gate Charge (Qg) (Max) @ Vgs | 99nC @ 20V |
| Typical Turn-Off Delay Time: | 40 ns |
| Drain to Source Voltage (Vdss) | 700V |
| Id - Continuous Drain Current: | 77 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Features of semiconductor devices | Kelvin terminal |
| Rds On - Drain-Source Resistance: | 44 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 2010pF @ 700V |
| Vds - Drain-Source Breakdown Voltage: | 700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Current - Continuous Drain (Id) @ 25В°C | 77A (Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Пороговое напряжение на затворе | -8 V, +19 V |
| Максимальное напряжение сток-исток Uси,В | 700 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 77 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 283 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 44 мОм |