MPSW06RLRAG, Trans GP BJT NPN 80V 0.5A 1000mW 3-Pin TO-92 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001168196
- Артикул
- MPSW06RLRAG
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- Category
- Bipolar Power
- Material
- Si
Цена по запросу
(от 48 ₽)
Минимальный заказ: 1713 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 80 В 0,5 А 1000 МВт 3-контактный TO-92 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Category | Bipolar Power |
| Material | Si |
| Mounting | Through Hole |
| Frequency | 50(MHz) |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Output Power | Not Required(W) |
| Package Type | TO-92 |
| Rad Hardened | No |
| Корпус | TO-92 |
| Configuration | Single |
| Package Width | 4.19(Max)mm |
| Package Length | 5.21(Max)mm |
| DC Current Gain | 80 |
| Frequency (Max) | 50 MHz |
| Product Category | Bipolar Power |
| Supplier Package | TO-92 |
| Power Dissipation | 1(W) |
| Number of Elements | 1 |
| Структура | npn |
| Transistor Polarity | NPN |
| Emitter-Base Voltage | 4(V) |
| Operating Temp Range | -55C to 150C |
| DC Current Gain (Min) | 80 |
| Standard Package Name | TO |
| Collector Current (DC) | 0.5(A) |
| Collector-Base Voltage | 80(V) |
| Minimum DC Current Gain | 80@50mA@1V|60@250mA@1V |
| Collector-Emitter Voltage | 80(V) |
| Number of Elements per Chip | 1 |
| Collector Current (DC) (Max) | 0.5 A |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum Base-Emitter Voltage (V) | 4 |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Collector-Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 50(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Operating Temperature Classification | Military |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base-Emitter Saturation Voltage (V) | 1.2@250mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@10mA@250mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.5 |