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MPSA56 PBFREE, Bipolar Transistors - BJT PNP Med Power

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Код товара
8005050221
Артикул
MPSA56 PBFREE
Бренд
Central Semiconductor Corp
ECCN
EAR99
HTSUS
8541.21.0095
Brand:
Central Semiconductor
Package
Bulk
Цена по запросу
(от 55,78 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор PNP 80В 500мА 50 МГц 625 МВт Со сквозным отверстием TO-92

Технические параметры

ECCNEAR99
HTSUS8541.21.0095
Brand:Central Semiconductor
PackageBulk
Packaging:Bulk
Вес, г0.45
Power - Max625mW
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Subcategory:Transistors
Manufacturer:Central Semiconductor
Mounting TypeThrough Hole
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting Style:Through Hole
Package / Case:TO-92
Transistor TypePNP
Product Category:Bipolar Transistors-BJT
Simulation Modelshttp://www.centralsemi.com/docs/csm/MPSA56.LIB
Структураpnp
Transistor Polarity:PNP
Operating Temperature-65В°C ~ 150В°C (TJ)
Frequency - Transition50MHz
Pd - Power Dissipation:625 mW
Supplier Device PackageTO-92
Gain Bandwidth Product fT:50 MHz
Emitter- Base Voltage VEBO:4 V
Collector- Base Voltage VCBO:80 V
Continuous Collector Current:500 mA
Maximum DC Collector Current:500 mA
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector (Ic) (Max)500mA
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:100
Current - Collector Cutoff (Max)100nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:80 V
Collector-Emitter Saturation Voltage:250 mV
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max)80V
Factory Pack Quantity: Factory Pack Quantity:2500

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