Транзистор полевой MMUN2133LT1G
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025144200
- Артикул
- MMUN2133LT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- RoHS
- Details
- Type
- PNP
- Brand
- ON Semiconductor
Цена по запросу
(от 1,70 ₽)
Минимальный заказ: 270 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
ТРАНЗИСТОР, RF, PNP, -50 В, SOT-23-3; Полярность цифрового транзистора: Одиночный PNP; Напряжение коллектор-эмиттер V(br)ceo: -50 В; Постоянный ток коллектора Ic:-100 мА; Базовый вxодной резистор R1: 4,7 Ком; Базово-эмиттерный резистор R2:47 ком
Технические параметры
| PPAP | No |
| RoHS | Details |
| Type | PNP |
| Brand | ON Semiconductor |
| Width | 1.3 mm |
| Height | 0.94 mm |
| Length | 2.9 mm |
| Series | MMUN2133L |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Unit Weight | 0.050717 oz |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-Pre-Biased |
| Supplier Package | SOT-23 |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 246 mW |
| Typical Input Resistor | 4.7 kOhms |
| Typical Resistor Ratio | 0.1 |
| DC Current Gain hFE Max | 80 |
| Minimum DC Current Gain | 80 5mA 10V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 400 mW |
| Peak DC Collector Current | 100 mA |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Continuous Collector Current | 0.1 A |
| Maximum DC Collector Current | -100 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Typical Input Resistor (kOhm) | 4.7 |
| DC Collector/Base Gain hfe Min | 80 |
| Maximum Power Dissipation (mW) | 400 |
| Maximum Collector Emitter Voltage | -50 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (mA) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 0.3mA 10mA |