MMPQ3904 Quad NPN Transistor, 200 mA, 40 V, 16-Pin SOIC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8211315827
- Артикул
- MMPQ3904
- Бренд
- ON Semiconductor***
- PPAP
- No
- RoHS
- Details
- Type
- NPN
- Brand
- ON Semiconductor/Fairchild
Цена по запросу
(от 270 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Широкий ассортимент транзисторов с биполярным переxодом (BJT) обеспечивает комплексные решения для различныx применений в сxемотеxнике.
Технические параметры
| PPAP | No |
| RoHS | Details |
| Type | NPN |
| Brand | ON Semiconductor/Fairchild |
| Width | 4 mm |
| Height | 1.5 mm |
| Length | 10 mm |
| Series | MMPQ3904 |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 16 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.31 |
| PCB changed | 16 |
| Part Status | Active |
| Unit Weight | 0.005044 oz |
| Manufacturer | ON Semiconductor |
| Package Type | SOIC |
| Configuration | Quad Dual Collector |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOIC-16 |
| Part # Aliases | MMPQ3904_NL |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOIC N |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 2500 |
| Standard Package Name | SOP |
| Pd - Power Dissipation | 1 W |
| Transistor Configuration | Isolated |
| Gain Bandwidth Product fT | 250 MHz |
| Maximum Power Dissipation | 1 W |
| Emitter- Base Voltage VEBO | 6 V |
| Maximum Operating Frequency | 250 MHz |
| Number of Elements per Chip | 4 |
| Collector- Base Voltage VCBO | 60 V |
| Continuous Collector Current | 0.2 A |
| Maximum DC Collector Current | 200 mA |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 75 |
| Maximum Collector Base Voltage | 60 V |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 250(Typ) |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 0.85 1mA 10mA|0.95 5mA 50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2 1mA 10mA|0.3 5mA 50mA |
| Максимально допустимый ток к ( Iк макс.А) | 200 mA |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 40 |