MMDT5551-7-F, Trans GP BJT NPN 160V 0.2A 320mW 6-Pin SOT-363 T/R
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- Код товара
- 8001120803
- Артикул
- MMDT5551-7-F
- Бренд
- DIODES INC.
- HTS
- 8541.29.00.95
- ECCN
- EAR99
- Type
- NPN
- HTSUS
- 8541.21.0075
Цена по запросу
(от 10 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN x2, биполярный, 160В, 0,2А, 200мВт, SOT363 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| HTS | 8541.29.00.95 |
| ECCN | EAR99 |
| Type | NPN |
| HTSUS | 8541.21.0075 |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | MMDT55 |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Power - Max | 200mW |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Package Type | SOT-363(SC-88) |
| REACH Status | REACH Unaffected |
| Subcategory: | Transistors |
| Корпус | SOT-363 |
| Configuration | Dual |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package Width | 1.3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Height | 1 |
| Package Length | 2.15 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Transistor Type | 2 NPN (Dual) |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-363 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Base Product Number | MMDT5551 -> |
| AEC Qualified Number | AEC-Q101 |
| Transistor Polarity: | NPN |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | SOT-26 |
| Frequency - Transition | 300MHz |
| Minimum DC Current Gain | 30@50mA@5V|80@10mA@5V|80@1mA@5V |
| Pd - Power Dissipation: | 200 mW |
| Supplier Device Package | SOT-363 |
| DC Current Gain hFE Max: | 250 |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 200 mW |
| Gain Bandwidth Product fT: | 300 MHz |
| Supplier Temperature Grade | Automotive |
| Emitter- Base Voltage VEBO: | 6 V |
| Maximum Operating Frequency | 300 MHz |
| Number of Elements per Chip | 2 |
| Maximum DC Collector Current | 200 mA |
| Maximum Emitter Base Voltage | 6 V |
| Collector- Base Voltage VCBO: | 180 V |
| Continuous Collector Current: | 0.2 A |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature | +150 °C |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector (Ic) (Max) | 200mA |
| Maximum Collector Base Voltage | 180 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 80 |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 6 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Maximum Collector Emitter Voltage | 160 V |
| Maximum Collector Base Voltage (V) | 180 |
| Maximum Transition Frequency (MHz) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 160 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Maximum Collector-Emitter Voltage (V) | 160 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 1@5mA@50mA|1@1mA@10mA |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15@1mA@10mA|0.2@5mA@50mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.2 |