MMDT3946-7-F, 200mW 100@10mA,1V 200mA 1PCSNPN&1PCSPNP -55°C~+150°C@(Tj) SOT-363-6 BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017602032
- Артикул
- MMDT3946-7-F
- Бренд
- DIODES INC.
- PPAP
- No
- RoHS
- Details
- Type
- NPN|PNP
- Brand
- Diodes Incorporated
Цена по запросу
(от 9,88 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN/PNP 40 В 0,2 А 200 МВт 6-контактный SOT-363 T/R
Технические параметры
| PPAP | No |
| RoHS | Details |
| Type | NPN|PNP |
| Brand | Diodes Incorporated |
| Width | 1.35 mm |
| Height | 1 mm |
| Length | 2.2 mm |
| Series | MMDT39 |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.03 |
| PCB changed | 6 |
| Part Status | Active |
| Subcategory | Transistors |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-363(SC-88) |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | SOT-363 |
| Configuration | Dual |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 |
| Transistor Type | NPN/PNP |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | SOT-363 |
| Структура | npn |
| Transistor Polarity | NPN, PNP |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 0.2 W |
| DC Current Gain hFE Max | 300 |
| Minimum DC Current Gain | 100 |
| Transistor Configuration | Isolated |
| Gain Bandwidth Product fT | 300 MHz |
| Maximum Power Dissipation | 200 mW |
| Emitter- Base Voltage VEBO | 6 V |
| Number of Elements per Chip | 2 |
| Collector- Base Voltage VCBO | 40 V |
| Continuous Collector Current | 0.2 A |
| Maximum DC Collector Current | 0.2 A |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Collector Base Voltage | 60 V |
| Maximum Power Dissipation (mW) | 200 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 6@NPN|5@PNP |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum Collector Base Voltage (V) | 60@NPN|40@PNP |
| Maximum Transition Frequency (MHz) | 300(Min)@NPN|250(Min)@PNP |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | 0.3 V |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 0.85@1mA@10mA|0.95@5mA@50mA |