MMBTH10LT1, Trans RF BJT NPN 25V 225mW 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8034480746
- Артикул
- MMBTH10LT1
- Бренд
- ON Semiconductor***
- PPAP
- No
- SVHC
- Yes
- Type
- NPN
- Material
- Si
Цена по запросу
(от 13 ₽)
Минимальный заказ: 6834 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans RF BJT NPN 25 В 225 МВт 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| Supplier Package | SOT-23 |
| Структура | npn |
| Standard Package Name | SOT |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 60@4mA@10V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Power Dissipation (mW) | 225 |
| Typical Output Capacitance (pF) | 0.7(Max) |
| Maximum Base-Emitter Voltage (V) | 3 |
| Maximum Collector-Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 800(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Emitter Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Voltage (V) | 25 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Voltage Range (V) | 30 to 40 |
| Maximum Junction Ambient Thermal Resistance | 556 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@0.4mA@4mA |