MMBTA56LT3G, Trans GP BJT PNP 80V 0.5A 300mW 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001145019
- Артикул
- MMBTA56LT3G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- PNP
- Brand:
- onsemi
- EU RoHS
- Compliant
Цена по запросу
(от 37 ₽)
Минимальный заказ: 830 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 80В, 0,5А, 225мВт, SOT23 Характеристики Категория Транзистор Тип биполярный Вид PNP
Технические параметры
| PPAP | No |
| Type | PNP |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Series: | MMBTA56L |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | onsemi |
| Package/Case: | SOT-23-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 100@100mA@1V|100@10mA@1V |
| Pd - Power Dissipation: | 225 mW |
| Gain Bandwidth Product fT: | 50 MHz |
| Emitter- Base Voltage VEBO: | -4 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | -80 V |
| Continuous Collector Current: | -0.5 A |
| Maximum DC Collector Current: | -500 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 300 |
| Minimum Operating Temperature: | -55 C |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 4 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 50(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | -80 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Collector-Emitter Saturation Voltage: | -250 mV |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@10mA@100mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.5 |