MMBTA55LT1G,Bipolar (BJT) Single Transistor, PNP, 60 V, 500 mA, 300 mW, SOT-23, Surface Mount
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- Код товара
- 8367490328
- Артикул
- MMBTA55LT1G
- Бренд
- ON Semiconductor***
- Case
- SOT23
- PPAP
- No
- Type
- PNP
- EU RoHS
- Compliant
Цена по запросу
(от 18 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 60 В 0,5 А 300 МВт 3-контактный SOT-23 T/R
Технические параметры
| Case | SOT23 |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Frequency | 50MHz |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Current gain | 100 |
| Manufacturer | ONSEMI |
| Polarisation | bipolar |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Kind of package | reel, tape |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Collector current | 0.5A |
| Power dissipation | 0.225/0.3W |
| Type of transistor | PNP |
| Структура | pnp |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 100@100mA@1V|100@10mA@1V |
| Collector-emitter voltage | 60V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 300 |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 4 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 50(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@10mA@100mA |