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MMBTA28-7-F, Транзистор: NPN, биполярный, Дарлингтон, 80В, 0,5А, 310мВт, SOT23

MMBTA28-7-F, Транзистор: NPN, биполярный, Дарлингтон, 80В, 0,5А, 310мВт, SOT23

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Код товара
8070185989
Артикул
MMBTA28-7-F
Бренд
DIODES INC.
HTS
8541.21.00.75
Type
NPN
Width
1.4mm
Brand:
Diodes Incorporated
Цена по запросу
(от 25,03 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор: NPN, биполярный, Дарлингтон, 80В, 0,5А, 310мВт, SOT23 Характеристики Категория Транзистор Тип биполярный Вид NPN

Технические параметры

HTS8541.21.00.75
TypeNPN
Width1.4mm
Brand:Diodes Incorporated
EU RoHSCompliant
Series:MMBTA28
MilitaryNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
Вес, г0.02
PCB changed3
Part StatusActive
Package TypeSOT-23
Subcategory:Transistors
КорпусSOT23/TO-236AB
ConfigurationSingle
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Package Width1.3
Product Type:Darlington Transistors
Configuration:Single
Package Height0.98
Package Length2.9
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Transistor TypeNPN
Supplier PackageSOT-23
Product Category:Darlington Transistors
Структураnpn
AEC Qualified NumberAEC-Q101
Transistor Polarity:NPN
Standard Package NameSOT-23
Minimum DC Current Gain10000@100mA@5V|10000@10mA@5V
Transistor ConfigurationSingle
Maximum Power Dissipation300 mW
Supplier Temperature GradeAutomotive
Emitter- Base Voltage VEBO:12 V
Number of Elements per Chip1
Maximum Emitter Base Voltage12 V
Collector- Base Voltage VCBO:80 V
Maximum DC Collector Current:500 mA
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
Maximum Collector Base Voltage80 V
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)300
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:10000
Maximum Emitter Base Voltage (V)12
Maximum Collector Cut-off Current0.0005mA
Maximum Collector Emitter Voltage80 V
Maximum Collector Base Voltage (V)80
Maximum Collector Cut-off Current:100 nA
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:80 V
Maximum Continuous Collector Current500 mA
Typical Current Gain Bandwidth (MHz)125(Min)
Maximum Collector-Emitter Voltage (V)80
Maximum Collector Cut-Off Current (uA)0.1
Maximum Base Emitter Saturation Voltage2 V
Maximum Continuous DC Collector Current (A)0.5
Maximum Collector Emitter Saturation Voltage1.5 V
Factory Pack Quantity: Factory Pack Quantity:3000
Maximum Collector-Emitter Saturation Voltage (V)1.5@100uA@100mA

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