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MMBTA14LT1G,Darlington Transistor, Darlington, NPN, 30 V, 225 mW, 300 mA, SOT-23, 3 Pins

MMBTA14LT1G,Darlington Transistor, Darlington, NPN, 30 V, 225 mW, 300 mA, SOT-23, 3 Pins

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Код товара
8717319449
Артикул
MMBTA14LT1G
Бренд
ON Semiconductor***
HTS
8541.21.00.75
PPAP
No
Type
NPN
Width
1.4mm
Цена по запросу
(от 19 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

HTS8541.21.00.75
PPAPNo
TypeNPN
Width1.4mm
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г0.03
PCB changed3
Part StatusActive
Package TypeSOT-23
КорпусSOT-23(TO-236)
ConfigurationSingle
Mounting TypeSurface Mount
Package Width1.3
Package Height0.94
Package Length2.9
Transistor TypeNPN
EDA / CAD ModelsMMBTA14LT1G by Ultra Librarian
Supplier PackageSOT-23
Структураnpn
Standard Package NameSOT
Minimum DC Current Gain5000
Transistor ConfigurationSingle
Maximum Power Dissipation300 mW
Number of Elements per Chip2
Maximum Emitter Base Voltage10 V
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-55 °C
Maximum Collector Base Voltage30 V
Maximum Power Dissipation (mW)300
Maximum Emitter Base Voltage (V)10
Maximum Collector Cut-off Current100nA
Maximum Collector Emitter Voltage30 V
Maximum Collector Base Voltage (V)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Collector Current300 mA
Operating Junction Temperature (°C)-55 to 150
Typical Current Gain Bandwidth (MHz)125(Min)
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (uA)0.1
Maximum Continuous DC Collector Current (A)0.3
Maximum Collector Emitter Saturation Voltage1.5 V
Maximum Collector-Emitter Saturation Voltage (V)1.5@0.1mA@100mA
Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В30

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