MMBTA06LT3G,BIPOLAR TRANSISTOR, NPN, 80V SOT-23

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8064187038
- Артикул
- MMBTA06LT3G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- Brand
- ON Semiconductor
- Series
- MMBTA06L
Цена по запросу
(от 17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 80 В 0,5 А 300 МВт 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand | ON Semiconductor |
| Series | MMBTA06L |
| EU RoHS | Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | SOT-23 |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 10000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 225 mW |
| Minimum DC Current Gain | 100 10mA 1V|100 100mA 1V |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 100 MHz |
| Maximum Power Dissipation | 225 mW |
| Emitter- Base Voltage VEBO | 4 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 80 V |
| Continuous Collector Current | 0.5 A |
| Maximum DC Collector Current | 0.5 A |
| Maximum Emitter Base Voltage | 4 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Collector Base Voltage | 80 V dc |
| Maximum Power Dissipation (mW) | 300 |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 4 |
| Maximum Collector Emitter Voltage | 80 V |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | 0.25 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 10mA 100mA |