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MMBT918LT1G, Bipolar Transistors - BJT 50mA 15V NPN

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Код товара
8006219085
Артикул
MMBT918LT1G
Бренд
ON Semiconductor***
Case
SOT23
Brand:
onsemi
Series:
MMBT918L
Mounting
SMD
Цена по запросу
(от 24 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

CaseSOT23
Brand:onsemi
Series:MMBT918L
MountingSMD
Frequency600MHz
Pin Count3
Вес, г0.01
Technology:Si
Current gain20
ManufacturerONSEMI
Package TypeSOT-23
Polarisationbipolar
Subcategory:Transistors
Manufacturer:onsemi
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Kind of packagereel, tape
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Transistor TypeNPN
Collector current50mA
Power dissipation0.225/0.3W
Product Category:Bipolar Transistors-BJT
Kind of transistorRF
Type of transistorNPN
Структураnpn
Transistor Polarity:NPN
Collector Current (Ic)50mA
Power Dissipation (Pd)225mW
Minimum DC Current Gain20
Pd - Power Dissipation:225 mW
Transistor ConfigurationSingle
Collector-emitter voltage15V
Maximum Power Dissipation225 mW
Transition Frequency (fT)600MHz
Gain Bandwidth Product fT:600 MHz
Emitter- Base Voltage VEBO:3 V
Maximum Operating Frequency100 MHz
Number of Elements per Chip1
DC Current Gain (hFE@Ic,Vce)20@3mA, 1V
Maximum DC Collector Current50 mA
Maximum Emitter Base Voltage3 V
Collector- Base Voltage VCBO:30 V
Continuous Collector Current:0.05 A
Maximum DC Collector Current:50 mA
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage30 V dc
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:20
Maximum Collector Emitter Voltage15 V
Collector- Emitter Voltage VCEO Max:15 V
Collector-Emitter Saturation Voltage:400 mV
Collector-Emitter Breakdown Voltage (Vceo)15V
Factory Pack Quantity: Factory Pack Quantity:3000

Техническая документация