MMBT5551M3T5G, Bipolar (BJT) Single Transistor, NPN, 160 V, 60 mA, 265 mW, SOT-723, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8352498182
- Артикул
- MMBT5551M3T5G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 56 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 160 В 0,06 А 640 МВт 3-контактный SOT-723 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.04 |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-723 |
| Структура | npn |
| Standard Package Name | SOT-723 |
| Minimum DC Current Gain | 80 1mA 5V|80 10mA 5V|30 50mA 5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 640 |
| Maximum DC Collector Current (A) | 0.06 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 180 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 160 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1 1mA 10mA|1 5mA 50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15 1mA 10mA|0.2 5mA 50mA |