MMBT5551LT3G, Bipolar Transistors - BJT 600mA 160V NPN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005371646
- Артикул
- MMBT5551LT3G
- Бренд
- ON Semiconductor***
- HTS
- 8541.21.00.95
- Type
- NPN
- EU RoHS
- Compliant
- Material
- Si
Цена по запросу
(от 11,03 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.21.00.95 |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Package Type | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 1.3 |
| Package Height | 0.94 |
| Package Length | 2.9 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Структура | npn |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 30@50mA@5V|80@10mA@5V|80@1mA@5V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 225 mW |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 600 mA |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 180 V dc |
| Maximum Power Dissipation (mW) | 300 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Emitter Voltage | 160 V |
| Maximum Collector Base Voltage (V) | 180 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 160 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 1@1mA@10mA|1@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@5mA@50mA|0.15@1mA@10mA |
| Максимально допустимый ток к ( Iк макс.А) | 600 |