MMBT5551_R1_00001, Bipolar Transistors - BJT NPNHIGHVOLTAGETRANSISTOR VCE160V IC600mA SOT-23
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- Код товара
- 8005536355
- Артикул
- MMBT5551_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Вес, г
- 0.01
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 16,34 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
160 В 250 МВт 80 при 10 мА, 5 В 600 мА на биполярныx транзистораx NPN SOT-23 - BJT ROHS
Технические параметры
| Brand: | Panjit |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Manufacturer: | Panjit |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 600mA |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 250mW |
| Power Dissipation (Pd) | 250mW |
| Pd - Power Dissipation: | 250 mW |
| DC Current Gain hFE Max: | 250 at 10 mA, 5 V |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain (hFE@Ic,Vce) | 80@10mA, 5V |
| Maximum DC Collector Current | 600mA |
| Collector- Base Voltage VCBO: | 180 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 80 at 10 mA, 5 V |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage | 160V |
| Collector- Emitter Voltage VCEO Max: | 160 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 160V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@50mA, 5mA |
| Максимально допустимый ток к ( Iк макс.А) | 600 |