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Diodes Inc MMBT5551-7-F NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

Diodes Inc MMBT5551-7-F NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

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Код товара
8011129922
Артикул
MMBT5551-7-F
Бренд
DIODES INC.
HTS
8541.29.00.95
Type
NPN
Brand:
Diodes Incorporated
EU RoHS
Compliant
Цена по запросу
(от 7,40 ₽)
Минимальный заказ: 100 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор: NPN, биполярный, 160В, 0,6А, 300мВт, SOT23 Характеристики Категория Транзистор Тип биполярный Вид NPN

Технические параметры

HTS8541.29.00.95
TypeNPN
Brand:Diodes Incorporated
EU RoHSCompliant
Series:MMBT5551
MilitaryNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г11
PCB changed3
Part StatusActive
Technology:Si
Package TypeSOT-23
Subcategory:Transistors
КорпусSOT23-3
ConfigurationSingle
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Package Width1.3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package Height0.98
Package Length2.9
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Transistor TypeNPN
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Standard Package NameSOT-23
Pd - Power Dissipation300mW
Minimum DC Current Gain80
Pd - Power Dissipation:300 mW
DC Current Gain hFE Max:250
Transistor ConfigurationSingle
Maximum Power Dissipation300 mW
Gain Bandwidth Product fT:300 MHz
Supplier Temperature GradeAutomotive
Emitter- Base Voltage VEBO:6 V
Maximum Operating Frequency300 MHz
Number of Elements per Chip1
Maximum DC Collector Current600 mA
Maximum Emitter Base Voltage6 V
Collector- Base Voltage VCBO:180 V
Continuous Collector Current:600 mA
Maximum DC Collector Current:600 mA
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage180 V
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)300
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:80
кол-во в упаковке3000
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Emitter Voltage160 V
Maximum Collector Base Voltage (V)180
Maximum Transition Frequency (MHz)300
Collector-Emitter Breakdown Voltage160V
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:160 V
Collector-Emitter Saturation Voltage:200 mV
Maximum Collector-Emitter Voltage (V)160
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1@5mA@50mA
Factory Pack Quantity: Factory Pack Quantity:3000
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.2@5mA@50mA

Техническая документация