MMBT5550LT1G, Транзистор маломощный SOT23-3
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8030573016
- Артикул
- MMBT5550LT1G
- Бренд
- ON Semiconductor***
- HTS
- 8541.21.00.95
- Type
- NPN
- Brand
- ON Semiconductor
- Series
- MMBT5550L
Цена по запросу
(от 11 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, NPN, 140 В, 0.6 А, 0,225 Вт
Технические параметры
| HTS | 8541.21.00.95 |
| Type | NPN |
| Brand | ON Semiconductor |
| Series | MMBT5550L |
| EU RoHS | Compliant |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 225 mW |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 1.3 |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Package Height | 0.94 |
| Package Length | 2.9 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 225 mW |
| Minimum DC Current Gain | 60@1mA@5V|60@10mA@5V|20@50mA@5V |
| Supplier Device Package | SOT-23-3(TO-236) |
| Emitter- Base Voltage VEBO | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 180 V |
| Continuous Collector Current | 600 mA |
| Maximum DC Collector Current | 600 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector (Ic) (Max) | 600 mA |
| DC Collector/Base Gain Hfe Min | 60 |
| Maximum Power Dissipation (mW) | 300 |
| Current - Collector Cutoff (Max) | 100nA |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 160 |
| Collector- Emitter Voltage VCEO Max | 140 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | 0.15 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Maximum Collector-Emitter Voltage (V) | 140 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1@1mA@10mA|1.2@5mA@50mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15@1mA@10mA|0.25@5mA@50mA |