MMBT5401-7-F, Транзистор: PNP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025288318
- Артикул
- MMBT5401-7-F
- Бренд
- DIODES INC.
- PPAP
- No
- RoHS
- Details
- Type
- PNP
- Brand
- Diodes Incorporated
Цена по запросу
(от 28,19 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 150 В 0,6 А 350 МВт 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| RoHS | Details |
| Type | PNP |
| Brand | Diodes Incorporated |
| Brand: | Diodes Incorporated |
| Series | MMBT5401 |
| EU RoHS | Compliant |
| Series: | MMBT5401 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23 |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT-23 |
| Pd - Power Dissipation | 300 mW |
| DC Current Gain HFE Max | 240 |
| Minimum DC Current Gain | 50 1mA 5V|60 10mA 5V|50 50mA 5V |
| Pd - Power Dissipation: | 310 mW |
| DC Current Gain hFE Max: | 240 |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 300 MHz |
| Maximum Power Dissipation | 300 mW |
| Emitter- Base Voltage VEBO | -5 V |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 300 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | -160 V |
| Continuous Collector Current | -0.2 A |
| Maximum DC Collector Current | 0.2 A |
| Maximum Emitter Base Voltage | -5 V |
| Collector- Base Voltage VCBO: | 160 V |
| Continuous Collector Current: | -200 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 60 |
| Maximum Collector Base Voltage | -160 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 60 |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 150 V |
| Maximum Collector Base Voltage (V) | 160 |
| Maximum Transition Frequency (MHz) | 300 |
| Collector- Emitter Voltage VCEO Max | -150 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 150 V |
| Collector-Emitter Saturation Voltage | -0.5 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Maximum Collector-Emitter Voltage (V) | 150 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 1 1mA 10mA|1 5mA 50mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2 1mA 10mA|0.5 5mA 50mA |