MMBT5088LT1G, Транзистор: NPN; биполярный; 30В; 50мА; 225/300мВт; SOT23
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- Код товара
- 8014284802
- Артикул
- MMBT5088LT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- EU RoHS
- Compliant
- Material
- Si
Цена по запросу
(от 12,44 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN; биполярный; 30В; 50мА; 225/300мВт; SOT23
Технические параметры
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 18 |
| PCB changed | 3 |
| Part Status | Active |
| Package Type | SOT-23 |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Структура | npn |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 300 100uA 5V|350 1mA 5V|300 10mA 5V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 mW |
| Maximum Operating Frequency | 20 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 50 mA |
| Maximum Emitter Base Voltage | 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 30 V |
| Maximum Power Dissipation (mW) | 300 |
| Maximum DC Collector Current (A) | 0.05 |
| Maximum Emitter Base Voltage (V) | 4.5 |
| Maximum Collector Emitter Voltage | 30 V |
| Maximum Collector Base Voltage (V) | 35 |
| Maximum Transition Frequency (MHz) | 50(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 0.8 1mA 10mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5 1mA 10mA |
| Максимальная рассеиваемая мощность ,Вт | 300мВт |