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MMBT4401Q-13-F, Bipolar Transistors - BJT General Purpose Transistor SOT23 T&R 10K

MMBT4401Q-13-F, Bipolar Transistors - BJT General Purpose Transistor SOT23 T&R 10K

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Код товара
8025006286
Артикул
MMBT4401Q-13-F
Бренд
DIODES INC.
PPAP
Yes
Type
NPN
Mounting
Surface Mount
Packaging
Tape and Reel
Цена по запросу
(от 22,26 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT NPN 40V 0.6A 350 МВт Автомобильный AEC-Q101 3-контактный SOT-23 T/R

Технические параметры

PPAPYes
TypeNPN
MountingSurface Mount
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
Вес, г0.3
PCB changed3
Part StatusActive
КорпусSOT-23(TO-236)
ConfigurationSingle
Package Width1.3
Package Length2.9
Transistor TypeNPN
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Collector Current (Ic)600mA
Power Dissipation (Pd)310mW
Minimum DC Current Gain20@0.1mA@1V|40@1mA@1V|80@10mA@1V|100@150mA@1V|40@500mA@2V
Transition Frequency (fT)250MHz
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
DC Current Gain (hFE@Ic,Vce)100@150mA, 1V
Maximum Power Dissipation (mW)350
Collector Cut-Off Current (Icbo)100nA
Maximum Base-Emitter Voltage (V)6
Maximum DC Collector Current (A)0.6
Maximum Collector-Base Voltage (V)60
Maximum Transition Frequency (MHz)250(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)40
Collector-Emitter Breakdown Voltage (Vceo)40V
Maximum Base-Emitter Saturation Voltage (V)0.95@15mA@150mA|1.2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|0.75@50mA@500mA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)750mV@500mA, 50mA

Техническая документация