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MMBT4401-TP, null 350mW 100@150mA,1V 600mA NPN SOT-23 BIpolar TransIstors - BJT

MMBT4401-TP, null 350mW 100@150mA,1V 600mA NPN SOT-23 BIpolar TransIstors - BJT

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Код товара
8026219103
Артикул
MMBT4401-TP
Бренд
Micro Commercial Components Corp. (MCC)
ECCN
EAR99
PPAP
No
Type
NPN
HTSUS
8541.21.0075
Цена по запросу
(от 8,70 ₽)
Минимальный заказ: 50 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 40 В 600 мА 250 МГц 350 МВт для поверxностного монтажа SOT-23

Технические параметры

ECCNEAR99
PPAPNo
TypeNPN
HTSUS8541.21.0075
Brand:Micro Commercial Components(MCC)
EU RoHSCompliant
PackageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Series:MMBT4401
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г0.3
PCB changed3
Part StatusActive
Power - Max350mW
RoHS StatusROHS3 Compliant
Technology:Si
REACH StatusREACH Unaffected
Subcategory:Transistors
КорпусSOT-23(TO-236)
ConfigurationSingle
Manufacturer:Micro Commercial Components(MCC)
Mounting TypeSurface Mount
Package/Case:SOT-23-3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting Style:SMD/SMT
Transistor TypeNPN
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Product Category:Bipolar Transistors-BJT
Структураnpn
Base Product NumberMMBT4401 ->
Transistor Polarity:NPN
Operating Temperature-55В°C ~ 150В°C (TJ)
Standard Package NameSOT
Collector Current (Ic)600mA
Frequency - Transition250MHz
Power Dissipation (Pd)350mW
Pd - Power Dissipation:350 mW
Supplier Device PackageSOT-23
Transition Frequency (fT)250MHz
Gain Bandwidth Product fT:250 MHz
Emitter- Base Voltage VEBO:6 V
Number of Elements per Chip1
DC Current Gain (hFE@Ic,Vce)100@150mA, 1V
Collector- Base Voltage VCBO:60 V
Maximum DC Collector Current:600 mA
Vce Saturation (Max) @ Ib, Ic750mV @ 50mA, 500mA
Current - Collector (Ic) (Max)600mA
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)350
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hFE Min:20
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Moisture Sensitivity Level (MSL)1 (Unlimited)
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:40 V
Operating Junction Temperature (°C)-55 to 150
Collector-Emitter Saturation Voltage:750 mV
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 1V
Maximum Collector-Emitter Voltage (V)40
Collector-Emitter Breakdown Voltage (Vceo)40V
Maximum Base Emitter Saturation Voltage (V)0.95 15mA 150mA|1.2 50mA 500mA
Voltage - Collector Emitter Breakdown (Max)40V
Factory Pack Quantity: Factory Pack Quantity:3000
Maximum Collector-Emitter Saturation Voltage (V)0.4 15mA 150mA|0.75 50mA 500mA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)750mV@500mA, 50mA
Максимально допустимый ток к ( Iк макс.А)600

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