MMBT4401-13-F, Trans GP BJT NPN 40V 0.6A 350mW 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001028527
- Артикул
- MMBT4401-13-F
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 4 ₽)
Минимальный заказ: 10000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 40 В 0,6 А 350 МВт 3-контактный SOT-23 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Collector Current (Ic) | 600mA |
| Power Dissipation (Pd) | 310mW |
| Pd - Power Dissipation: | 310 mW |
| DC Current Gain hFE Max: | 300 at 150 mA, 1 V |
| Transition Frequency (fT) | 250MHz |
| Gain Bandwidth Product fT: | 250 MHz |
| Supplier Temperature Grade | Commercial |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 1V |
| Collector- Base Voltage VCBO: | 60 V |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 20 at 100 uA, 1 V |
| Collector Cut-Off Current (Icbo) | 100nA |
| Maximum DC Collector Current (A) | 0.6 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 250(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 750 mV |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@50mA@500mA|0.95@15mA@150mA |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.75@50mA@500mA|0.4@15mA@150mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 750mV@50mA, 500mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.6 |