MMBT3906TT1G, Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 200 mW, SOT-416, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8584013203
- Артикул
- MMBT3906TT1G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Type
- PNP
- Brand
- ON Semiconductor
- Series
- MMBT3906T
Цена по запросу
(от 14 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, PNP, 40 В, 0.2 А, 0,2 Вт
Технические параметры
| HTS | 8541.29.00.95 |
| Type | PNP |
| Brand | ON Semiconductor |
| Series | MMBT3906T |
| EU RoHS | Compliant |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | SC-75 |
| Configuration | Single |
| Package Width | 0.8 |
| Mounting Style | SMD/SMT |
| Package / Case | SC-75-3 |
| Package Height | 0.75 |
| Package Length | 1.6 |
| Transistor Type | PNP |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-416 |
| Структура | pnp |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Collector Current (Ic) | 200mA |
| Pd - Power Dissipation | 225 mW |
| Power Dissipation (Pd) | 200mW |
| Minimum DC Current Gain | 60@0.1mA@1V|100@10mA@1V|60@50mA@1V|80@1mA@1V|30@100mA@1V |
| Gain Bandwidth Product FT | 250 MHz |
| Transition Frequency (fT) | 250MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | -40 V |
| Continuous Collector Current | -0.2 A |
| DC Current Gain (hFE@Ic,Vce) | 100@10mA, 1V |
| Maximum DC Collector Current | 0.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 60 |
| Maximum Power Dissipation (mW) | 300 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 250(Min) |
| Collector- Emitter Voltage VCEO Max | -40 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector-Emitter Saturation Voltage | -0.4 V |
| Operating Junction Temperature (°C) | -65 to 150 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Maximum Base Emitter Saturation Voltage (V) | 0.85@1mA@10mA|0.95@5mA@50mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@5mA@50mA|0.25@1mA@10mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@50mA, 5mA |
| Максимально допустимый ток к ( Iк макс.А) | 200 mA |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 40 |