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MMBT3906T-7-F, Bipolar Transistors - BJT -40V 150mW

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Код товара
8005060024
Артикул
MMBT3906T-7-F
Бренд
DIODES INC.
Brand:
Diodes Incorporated
Series:
MMBT39
Pin Count
3
Вес, г
0.01
Цена по запросу
(от 25 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

Brand:Diodes Incorporated
Series:MMBT39
Pin Count3
Вес, г0.01
Technology:Si
Package TypeSOT-523(SC-89)
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:SOT-523-3
Transistor TypePNP
Product Category:Bipolar Transistors-BJT
Transistor Polarity:PNP
Collector Current (Ic)200mA
Power Dissipation (Pd)150mW
Minimum DC Current Gain100
Pd - Power Dissipation:150 mW
DC Current Gain hFE Max:300
Transistor ConfigurationSingle
Maximum Power Dissipation150 mW
Transition Frequency (fT)250MHz
Gain Bandwidth Product fT:140 MHz
Emitter- Base Voltage VEBO:5 V
Maximum Operating Frequency250 MHz
Number of Elements per Chip1
DC Current Gain (hFE@Ic,Vce)100@10mA, 1V
Maximum DC Collector Current200 mA
Maximum Emitter Base Voltage-5 V
Collector- Base Voltage VCBO:40 V
Continuous Collector Current:-200 mA
Maximum DC Collector Current:200 mA
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage-40 V
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
Collector Cut-Off Current (Icbo)50nA
Maximum Collector Emitter Voltage40 V
Collector- Emitter Voltage VCEO Max:40 V
Collector-Emitter Saturation Voltage:400 mV
Collector-Emitter Breakdown Voltage (Vceo)40V
Factory Pack Quantity: Factory Pack Quantity:3000
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)400mV@50mA, 5mA

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