MMBT3904W_R1_00001, 40V 150mW 100@10mA,1V 200mA 300mV@50mA,5mA NPN -55-~+150-@(Tj) SOT-323-3 Bipolar Transistors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8015933679
- Артикул
- MMBT3904W_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Series:
- GPT-02TAN
- Вес, г
- 0.02
- Technology:
- Si
Цена по запросу
(от 3,60 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Series: | GPT-02TAN |
| Вес, г | 0.02 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-323-3 |
| Manufacturer: | Panjit |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Pd - Power Dissipation | 150mW |
| Pd - Power Dissipation: | 150 mW |
| DC Current Gain hFE Max: | 300 at 10 mA, 1 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Maximum DC Collector Current | 200mA |
| Collector- Base Voltage VCBO: | 60 V |
| Continuous Collector Current: | 200 mA |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 100 at 10 mA, 1 V |
| Collector-Emitter Breakdown Voltage | 40V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |