MMBT2907AW_R1_00001, 60V 225mW 600mA PNP SOT-323-3 Bipolar Transistors - BJT
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- Код товара
- 8015904717
- Артикул
- MMBT2907AW_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Вес, г
- 0.03
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 6,90 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы PNP SOT-323-3 мощностью 60 В 225 МВт при 100@150 мА, 10 В 600 мА - BJT ROHS
Технические параметры
| Brand: | Panjit |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-323-3 |
| Manufacturer: | Panjit |
| Package/Case: | SOT-323-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 600mA |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 225mW |
| Power Dissipation (Pd) | 225mW |
| Pd - Power Dissipation: | 225 mW |
| DC Current Gain hFE Max: | 300 |
| Transition Frequency (fT) | 200MHz |
| Gain Bandwidth Product fT: | 200 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Maximum DC Collector Current | 600mA |
| Collector- Base Voltage VCBO: | 60 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 100 |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage | 60V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.6V@50mA, 500mA |
| Максимально допустимый ток к ( Iк макс.А) | 600 |