MMBT2907A_R1_00001, 10nA 60V 225mW 100@150mA,10V 600mA 200MHz 1.6V@500mA,50mA PNP -55-~+150-@(Tj) SOT-23 Bipolar Transistors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8015870822
- Артикул
- MMBT2907A_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Series:
- GPT-02TP
- Вес, г
- 0.03
- Technology:
- Si
Цена по запросу
(от 6 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Series: | GPT-02TP |
| Вес, г | 0.03 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Manufacturer: | Panjit |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 600mA |
| Pd - Power Dissipation | 225mW |
| Power Dissipation (Pd) | 225mW |
| Pd - Power Dissipation: | 225 mW |
| DC Current Gain hFE Max: | 300 at-150 mA, -10 V |
| Transition Frequency (fT) | 200MHz |
| Gain Bandwidth Product fT: | 200 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 100@150mA, 10V |
| Maximum DC Collector Current | 600mA |
| Collector- Base Voltage VCBO: | 60 V |
| Continuous Collector Current: | -600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 100 at-150 mA, -10 V |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage | 60V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1.6V@500mA, 50mA |
| Максимально допустимый ток к ( Iк макс.А) | 600 |
| Граничная частота коэффициента передачи тока fгр.МГц | 200 |