MMBT2222ATT3G, Trans GP BJT NPN 40V 0.6A 150mW 3-Pin SOT-416 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001003586
- Артикул
- MMBT2222ATT3G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- MMBT2222AT
- Вес, г
- 0.05
- Power - Max
- 150 mW
Цена по запросу
(от 5 ₽)
Минимальный заказ: 21127 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный (BJT) транзистор NPN 40 В 600 мА 300 МГц 150 МВт для поверxностного монтажа SC-75, SOT-416
Технические параметры
| Brand: | onsemi |
| Series: | MMBT2222AT |
| Вес, г | 0.05 |
| Power - Max | 150 mW |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | SC-75, SOT-416 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-416-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Frequency - Transition | 300MHz |
| Pd - Power Dissipation: | 150 mW |
| Supplier Device Package | SC-75, SOT-416 |
| Gain Bandwidth Product fT: | 300 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO: | 75 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 35 |
| Current - Collector Cutoff (Max) | 10nA(ICBO) |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |
| Максимально допустимый ток к ( Iк макс.А) | 0.6 |