MMBT2222A_R1_00001, Bipolar Transistors - BJT NPNGENERALPURPOSES WITCHINGTRANSISTOR VCE40V IC600mA SOT-23
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004772482
- Артикул
- MMBT2222A_R1_00001
- Бренд
- PanJit Semiconductors
- Brand:
- Panjit
- Series:
- GPT-03TN
- Вес, г
- 0.01
- Technology:
- Si
Цена по запросу
(от 12,01 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Panjit |
| Series: | GPT-03TN |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Manufacturer: | Panjit |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Pd - Power Dissipation | 225mW |
| Pd - Power Dissipation: | 225 mW |
| DC Current Gain hFE Max: | 300 at 150 mA, 10 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Maximum DC Collector Current | 600mA |
| Collector- Base Voltage VCBO: | 75 V |
| Continuous Collector Current: | 600 mA |
| Maximum DC Collector Current: | 600 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 100 at 150 mA, 10 V |
| Collector-Emitter Breakdown Voltage | 40V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимально допустимый ток к ( Iк макс.А) | 600 |