MMBFJ211, Транзистор N-JFET, полевой, 225мВт, SOT23, 10мА

Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8043032535
- Артикул
- MMBFJ211
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Type
- JFET
- Brand
- ON Semiconductor/Fairchild
- Type:
- JFET
Цена по запросу
(от 61,83 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор JFET N-CH 3-контактный SOT-23 T/R - Лента и катушка (Alt: MMBFJ211)
Технические параметры
| RoHS | Details |
| Type | JFET |
| Brand | ON Semiconductor/Fairchild |
| Type: | JFET |
| Brand: | onsemi/Fairchild |
| Series | MMBFJ211 |
| Product | RF JFET |
| Series: | MMBFJ211 |
| Packaging | Cut Tape |
| Technology | Si |
| Вес, г | 0.02 |
| Technology: | Si |
| Unit Weight | 0.000282 oz |
| Manufacturer | ON Semiconductor |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | onsemi |
| Product Type: | JFETs |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | JFET |
| Product Category | RF JFET Transistors |
| Product Category: | JFET |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 225 mW |
| Pd - Power Dissipation: | 225 mW |
| Gate-Source Cutoff Voltage | -4.5 V |
| Maximum Drain Gate Voltage | 25 V |
| Gate-Source Cutoff Voltage: | -4.5 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature Range | -55 C to+150 C |
| Operating Temperature Range: | -55 C to+150 C |
| Id - Continuous Drain Current | 20 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 0.006 S to 0.012 S |
| Id - Continuous Drain Current: | 20 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 0.006 S to 0.012 S |
| Vgs - Gate-Source Breakdown Voltage | -25 V |
| Vgs - Gate-Source Breakdown Voltage: | -25 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |