MJF15030G, Trans GP BJT NPN 150V 8A 2000mW 3-Pin(3+Tab) TO-220FP Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001056545
- Артикул
- MJF15030G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- Type
- NPN
Цена по запросу
(от 170 ₽)
Минимальный заказ: 150 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 150V 8A 2000 МВт 3-контактный (3 + язычка) разъем TO-220FP
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| Type | NPN |
| Brand | ON Semiconductor |
| Width | 4.9 mm(Max) |
| Height | 9.24 mm(Max) |
| Length | 10.63 mm(Max) |
| Series | MJF15030 |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 3.5 |
| PCB changed | 3 |
| Part Status | Active |
| Unit Weight | 0.08113 oz |
| Manufacturer | ON Semiconductor |
| Package Type | TO-220FP |
| Корпус | TO-220FP |
| Configuration | Single |
| Mounting Type | Through Hole |
| Mounting Style | Through Hole |
| Package / Case | TO-220FP-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | TO-220FP |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 50 |
| Standard Package Name | TO |
| Pd - Power Dissipation | 36 W |
| Minimum DC Current Gain | 40@100mA@2V|40@2A@2V|40@3A@2V|20@4A@2V |
| Transistor Configuration | Single |
| Gain Bandwidth Product fT | 30 MHz |
| Maximum Power Dissipation | 2 W |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum Operating Frequency | 30 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 150 V |
| Continuous Collector Current | 8 A |
| Maximum DC Collector Current | 8 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain hfe Min | 20 |
| Maximum Collector Base Voltage | 150 V |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 8 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 150 V |
| Maximum Collector Base Voltage (V) | 150 |
| Maximum Transition Frequency (MHz) | 30(Min) |
| Collector- Emitter Voltage VCEO Max | 150 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Maximum Collector-Emitter Voltage (V) | 150 |
| Maximum Collector Cut-Off Current (nA) | 10000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@0.1A@1A |
| Максимально допустимый ток к ( Iк макс.А) | 8 |