MJE5851G, Trans GP BJT PNP 350V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001039063
- Артикул
- MJE5851G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
- SVHC
- Yes
Цена по запросу
(от 503 ₽)
Минимальный заказ: 164 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 350V 8A 80000 МВт 3-контактная (3 + язычка) трубка TO-220AB
Технические параметры
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| SVHC | Yes |
| Type | PNP |
| Brand | ON Semiconductor |
| Width | 4.83 mm |
| Height | 15.75 mm |
| Length | 10.53 mm |
| Series | MJE5851 |
| Material | Si |
| Mounting | Through Hole |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 0.05 |
| PCB changed | 3 |
| Part Status | Obsolete |
| Unit Weight | 0.211644 oz |
| Manufacturer | ON Semiconductor |
| Корпус | TO-220 |
| Configuration | Single |
| Package Width | 4.83(Max)mm |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Package Length | 10.53(Max)mm |
| Product Category | Bipolar Power |
| Supplier Package | TO-220AB |
| Структура | pnp |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 50 |
| Standard Package Name | TO |
| Pd - Power Dissipation | 80 W |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 15@2A@5V|5@5A@5V |
| Maximum Base Current (A) | 4 |
| Emitter- Base Voltage VEBO | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 400 V |
| Continuous Collector Current | 8 A |
| Maximum DC Collector Current | 8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain hfe Min | 15 |
| Maximum Power Dissipation (mW) | 80000 |
| Maximum DC Collector Current (A) | 8 |
| Maximum Emitter Base Voltage (V) | 6 |
| Collector- Emitter Voltage VCEO Max | 350 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector-Emitter Saturation Voltage | 2 V |
| Operating Junction Temperature (°C) | -65 to 150 |
| Maximum Collector-Emitter Voltage (V) | 350 |
| Maximum Base Emitter Saturation Voltage (V) | 1.5@1A@4A |
| Maximum Collector-Emitter Saturation Voltage (V) | 2@1A@4A|5@3A@8A |
| Максимально допустимый ток к ( Iк макс.А) | 8 |