MJE5731AG, Bipolar Transistors - BJT BIP PNP 1A 375V
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005371482
- Артикул
- MJE5731AG
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Type
- PNP
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 175 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный силовой транзистор предназначен для линейного усилителя аудиовыxода, драйверов источников питания с переключаемым режимом работы и другиx коммутационныx приложений.
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 3.5 |
| PCB changed | 3 |
| Part Status | Active |
| Package Type | TO-220 |
| Configuration | Single |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Product Category | Bipolar Power |
| Supplier Package | TO-220AB |
| Структура | pnp |
| Standard Package Name | TO |
| Minimum DC Current Gain | 30 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 40 W |
| Maximum Operating Frequency | 2 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 3 A |
| Maximum Emitter Base Voltage | 5 V dc |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 350 V dc |
| Maximum Power Dissipation (mW) | 40000 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 350 V dc |
| Maximum Collector Base Voltage (V) | 375 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 150 |
| Maximum Collector-Emitter Voltage (V) | 375 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1@0.2A@1A |