MJE5730G, Bipolar Transistors - BJT 1A 300V 40W PNP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005371481
- Артикул
- MJE5730G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Packaging:
- Tube
- Вес, г
- 6
- Technology:
- Si
Цена по запросу
(от 160,04 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | onsemi |
| Packaging: | Tube |
| Вес, г | 6 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Package/Case: | TO-220-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 50 |
| Pd - Power Dissipation: | 40 W |
| Gain Bandwidth Product fT: | 10 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 300 V |
| Continuous Collector Current: | 1 A |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 30 |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 1 V |