MJD350T4G, Транзистор: PNP, биполярный, 300В, 0,5А, 15Вт, DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017530172
- Артикул
- MJD350T4G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Type
- PNP
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 77,91 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 300В, 0,5А, 15Вт, DPAK
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Active |
| Package Type | DPAK(TO-252) |
| Корпус | DPAK/TO-252AA |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Product Category | Bipolar Power |
| Supplier Package | DPAK |
| Структура | pnp |
| Standard Package Name | TO-252 |
| Minimum DC Current Gain | 30@50mA@10V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.56 W |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | -500 mA |
| Maximum Emitter Base Voltage | 3 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 300 V |
| Maximum Power Dissipation (mW) | 1560 |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 3 |
| Maximum Collector Emitter Voltage | -300 V |
| Maximum Collector Base Voltage (V) | 300 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 150 |
| Maximum Collector-Emitter Voltage (V) | 300 |
| Maximum Collector-Emitter Saturation Voltage (V) | 1@10mA@100mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.5 |