MJD350-13, Bipolar Transistors - BJT HIGH VOLTAGE PNP SMT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004701772
- Артикул
- MJD350-13
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- MJD350
- Вес, г
- 0.26
- Technology:
- Si
Цена по запросу
(от 81,84 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | MJD350 |
| Вес, г | 0.26 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | DPAK-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Pd - Power Dissipation: | 15 W |
| DC Current Gain hFE Max: | 30 at 50 mA, 10 V |
| Gain Bandwidth Product fT: | 10 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Collector- Base Voltage VCBO: | 300 V |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 30 |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |