MJD340T4G, Trans GP BJT NPN 300V 0.5A 1560mW 3-Pin(2+Tab) DPAK
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8013888422
- Артикул
- MJD340T4G
- Бренд
- ON Semiconductor***
- Brand
- ON Semiconductor
- Series
- MJD340
- Packaging
- Cut Tape or Reel
- Вес, г
- 1
Цена по запросу
(от 190 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | ON Semiconductor |
| Series | MJD340 |
| Packaging | Cut Tape or Reel |
| Вес, г | 1 |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | TO-252/DPAK |
| Configuration | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 2500 |
| Collector Current (Ic) | 500mA |
| Pd - Power Dissipation | 15 W |
| Power Dissipation (Pd) | 15W |
| Transition Frequency (fT) | 10MHz |
| Emitter- Base Voltage VEBO | 3 V |
| Collector- Base Voltage VCBO | 300 V |
| Continuous Collector Current | 0.5 A |
| DC Current Gain (hFE@Ic,Vce) | 30@50mA, 10V |
| Maximum DC Collector Current | 0.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain Hfe Min | 30 |
| Collector Cut-Off Current (Icbo) | 100uA |
| Collector- Emitter Voltage VCEO Max | 300 V |
| Collector-Emitter Saturation Voltage | 1 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 300V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@100mA, 10mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.5 |